制备了基于酞菁铜(CuPc)的有机光敏场效应晶体管,对器件的光敏特性进行了研究。实验结果表明,基于金源漏电极的器件,在波长655 nm,光强100 mW/cm2的光照下,明/暗电流比约为0.4,光响应度约为2.55 mA/W;而铝为源漏电极的器件,可以获得高达104的明/暗电流比,但光响应度降低为0.39 mA/W。
Organic field-effect transistors(OFETs) based on copper phthalocyanine were fabricated and their current-voltage characteristics were measured in dark/under illumination.The results showed that OFETs with Au as source/drain electrodes exhibited a photo-current/dark-current ratio of 0.4 and a photoresponsivity of 2.55 mA/W under illumination by a laser diode with a wavelength of 655 nm and power density of 100 mW/cm2;however,OFETs with Al as source/drain electrodes exhibited a photo-current/dark-current ratio up to 104 and a much lower photoresponsivity of 0.39 mA/W under the same conditions.The tremendous increase of photo-current/dark-current ratio is ascribed to the decrease of dark-current caused by Schottky contacts between Al source/drain electrodes and CuPc.