中文摘要：

通过气相外延技术生长了Au掺杂的Hg_（1-x）Cd_xTe薄膜材料。利用傅里叶光谱仪和金相显微镜对外延材料进行了表征。通过二次离子质谱（Secondary Ion Mass Spectroscopy,SIMS）技术分析了Au在Hg_（1-x）Cd_xTe外延层以及CdZnTe衬底中的纵向分布趋势。利用SIMS技术还分析了Ⅰ、Ⅱ族和Ⅵ、Ⅶ族杂质在Hg_（1-x）Cd_xTe外延层以及CdZnTe衬底中的纵向分布趋势,发现衬底和外延层的过渡区具有吸杂作用。研究结果对提高探测器的性能具有指导意义。

英文摘要：

Au-doped Hg_（1-x）Cd_x Te epitaxial layer materials were grown by using a vapor phase epitaxial method.The layer materials were characterized by a Fourier spectrometer and a metallographic microscope.The longitudinal distribution trend of Au in the Hg_（1-x）Cd_x Te epitaxial layer and CdZnTe substrate was analyzed by Secondary Ion Mass spectrometry（SIMS）.In addition,the longitudinal distribution trend of Ⅰ and Ⅱ impurities and Ⅵ and Ⅶ impurities in the Hg_（1-x）Cd_xTe epitaxial layer and CdZnTe substrate was also analyzed by SIMS.It was found that the transition region between the substrate and the epitaxial layer can absorb the impurities.This result is of significance to the improvement of detectors in performance.