中文摘要：

利用气相外延技术在Cd Zn Te衬底上生长Hg1-xCdxTe薄膜材料,通过在不同晶向、不同极性、不同晶向偏离角度Cd Zn Te衬底上的外延结果发现,Cd Zn Te衬底对外延形貌的影响非常大。（111）面衬底上外延形貌明显优于（211）面衬底的外延形貌。对于同是〈111〉Cd Zn Te晶向的衬底,（111）Cd面Cd Zn Te衬底上的外延形貌明显优于（111）Te面。对于（111）Cd面Cd Zn Te衬底,当晶向偏离角度不同时,其外延形貌也有差异,晶向偏离角越小表面形貌越好。

英文摘要：

Hg1-xCdxTe epitaxial layers were grown on CdZnTe substrate by vapor phase epitaxial method. Seeing from Hg1-xCdxTe epitaxial layers growth on different crystal orientation ,polarity and deviation angle of CdZnTe substrates, CdZnTe substrate has the large influence on surface topography. The surface topography of Hg1-xCdxTe epitaxial layers on（111） surface is superior to that on（211） surface. For 〈 111 〉 crystallographic orientation of CdZnTe substrate, the surface topography of Hg1-xCdxTe epitaxial layer on（ 111 ） Cd surface is superior to that on（ 111 ） Te surface. For （111 ） Cd surface, the surface topography of epitaxial layers is different when deviation angle of（ 111 ） CdZnTe crystallographic orientation is different. The surface topography is good when the deviation angle of（ 111 ） CdZnTe is very