碲化铯(CszTe)阴极是紫外探测器的重要组成部分,其研究的时间较早,在某些紫外探测领域得到了良好应用。但是,同时具有高量子效率及良好日盲特性的阴极制备工艺还需要进一步探索。本文采用电子束蒸发镀膜在石英窗上制备金属Ni膜作为Cs2Te阴极的导电基底,用四探针测试仪、高阻计和分光光度计研究了薄膜的方块电阻和透过率关系。在超高真空系统中进行Cs2Te阴极制备,研究Te膜厚度对阴极量子效率的影响关系。用X光能量色散谱分析CszTe光电阴极的组分,研究Cs量与阴极日盲特性的影响关系。结果表明,最佳Ni膜厚度为1.0nm,其电阻为107彤口左右,其紫外波段透过率高达80%;嘞Te阴极的Te膜厚度为2.0nm时,光电阴极量子效率达12%;当CszTe阴极中Cs过量,其波长响应向长波方向延伸,Cs欠量,阴极量子效率降低。
A novel type of Cs2Te ultraviolet (UV) cathode with high quantum efficiency and good solar-blind char- acteristics was developed. The cathode was fabricated mainly in three steps:first, the Ni films of the cathode conductive substrate, were deposited by electron beam evaporation on a quartz window;next,the Te films were grown by thermal e- vaporation,via resistive heating,on the Ni-coated quaaz window in ultrahigh vacuum;finally, the Cs films, deposited by thermal evaporation on top of the Te films, were activated with UV light. The impacts of the microstructures and properties of the Ni, Te, and Cs films, including the sheet resistance and transmittance of the Ni films, the Te film thickness, and Cs content, on the performance of the cathode were studied with X-my diffraction, and energy dispersive spectroscopy. The re- sults show that the Cs2Te cathode, fabricated under optimized conditions, has high quantum efficiency and good solar-blind characteristics.The 1.0 nm thick Ni films have a sheet resistance of 107 Ω/□ and a UV transmittance up to 80%;a quantum efficiency of the cathode made of the 2.0 nm thick Te films reaches 12%. Besides, excessive Cs shifts the re- sponse towards the long wavelength;but low Cs content decreases the quantum efficiency.