位置：成果数据库 > 期刊 > 期刊详情页
Reducing the contact resistance of SiNW devices by employing a heavily doped carrier injection layer
  • ISSN号：0957-4484
  • 期刊名称：Nanotechnology
  • 时间：2012.8.8
  • 页码：1-6
  • 相关项目：波纹化石墨烯纳米条带的制备及器件特性研究
作者： Zhang, Guangyu|Shi, Zhiwen|Zhang, Lianchang|He, Congli|Zhang, Jing|Cheng, Meng|Yang, Rong|Tian, Xuezeng|Bai, Xuedong|
同期刊论文项目
波纹化石墨烯纳米条带的制备及器件特性研究
期刊论文 11
同项目期刊论文
Catalyst-free growth of nanographene films on various substrates
Observation of Raman G-Peak Split for Graphene Nanoribbons with Hydrogen-Terminated Zigzag Edges
Restoration of graphene from graphene oxide by defect repair
Super-Elastic Graphene Ripples for Flexible Strain Sensors
Ultra-sensitive strain sensors based on piezoresistive nanographene films