中文摘要：

Recently,many groups have focused on the development of GaN-based green LDs to meet the demand for laser display.Great progresses have been achieved in the past few years even that many challenges exist.In this article,we analysis the challenges to develop GaN-based green LDs,and then the approaches to improve the green LD structure in the aspect of crystalline quality,electrical properties,and epitaxial layer structure are reviewed,especially the work we have done.

英文摘要：

Recently,many groups have focused on the development of GaN-based green LDs to meet the demand for laser display.Great progresses have been achieved in the past few years even that many challenges exist.In this article,we analysis the challenges to develop GaN-based green LDs,and then the approaches to improve the green LD structure in the aspect of crystalline quality,electrical properties,and epitaxial layer structure are reviewed,especially the work we have done.