中文摘要：

我们理论上调查兆兆赫(THz ) 从 110-oriented 的排放和察觉电镀物品眼(EO ) 为做 Yb 的 femtosecond 改编的晶体搏动激光。根据匹配阶段的状况的原则，在在声子下面的 CdTe，差距，和 GaAs 晶体的光速度和 THz 脉搏， THz 吸收系列，和连贯长度之间的分散关系反响的频率相应地被计算。光校正和有 0.1 公里的一样的厚度的上面的晶体的 EO 采样过程被模仿。作为后果，我们发现然而， CdTe 的最佳的排放频率在 2.65 THz 它到达 GaAs 的 6.56 THz 和 4.77 THz 豁开。在频率反应功能的帮助下， CdTe 的计算截止频率仅仅是 3.45 THz，当 GaAs 和差距相应地完成 7.15 和 6.37 THz 时。最后，当晶体厚度超过 1.58 公里时， GaAs 的 EO 采样敏感比 CdTe 和差距高。CdTe 的强壮的 THz 吸收清楚地浸透有它增加的厚度的 EO 采样敏感。

英文摘要：

We theoretically investigate terahertz （THz） emission and detection from （ll0）-oriented electro-optic （EO） crystals adapted for Yb-doped femtosecond pulse laser. According to the principles of phase-matching condition, the dispersion relation between optical velocity and THz pulse, THz absorption spectra, and coherence lengths of CdTe, GaP, and GaAs crystals below the phonon resonant frequency are calculated correspondingly. The optical rectification and EO sampling process of above crystals with the same thickness of 0.1 mm are simulated. As a consequence, we found that the optimal emission frequency of CdTe is at 2.65 THz, however, it reaches 6.56 THz of GaAs and 4.77 THz of GaP. With the help of frequency response function, the calculated cut-off frequency of CdTe is only 3.45 THz, while GaAs and GaP achieve 7.15 and 6.37 THz correspondingly. Finally, the EO sampling sensitivity of GaAs is higher than CdTe and GaP when the crystal＇s thickness exceeds 1.58 mm. The strong THz absorption of CdTe saturates distinctly the EO sampling sensitivity with its thickness increasing.