中文摘要：

大功率绝缘栅极双极型晶体管（insulated gate bipolar transistor,IGBT）模块在风力发电、电力机车牵引和高压直流输电等众多领域得到了广泛的应用。在以上高安全性的应用领域,IGBT模块的可靠性成为电力电子学科的研究热点之一。已有研究成果表明,IGBT的可靠性与其结温变化有密切的联系。该文基于可靠性研究的需要,提出一种基于关断延迟时间的结温提取方法。该方法利用模块自身存在的寄生电感获取关断延迟时间信息,最后对关断延迟时间的温度特性进行分析,并通过大功率IGBT离线测试系统进行了实验验证,结果证明通过模块寄生电感在关断过程中的变化检测关断延迟时间进行结温提取的方法有效可行。

英文摘要：

High power insulated gate bipolar transistor（IGBT） modules are widely used in the wind power systems, electric locomotives, high voltage direct current transmission（HVDC）, etc. In such safety-critical applications, the reliability of IGBT modules is emerging technology for the researchers. It has been disclosed that the IGBT reliability is closely related to the junction temperature. In this paper, a junction temperature extraction method is presented based on the device turn-off delay time. The module internal parasitic inductance is utilized to extract the turn off delay time, and its temperature characteristics are analyzed. Experimental verification involves monitoring high power IGBT switching characteristics by the designed offline test bench. The junction temperature extraction method based on turn-off delay time due to module parasitic inductance is proved to be viable and effective.