位置：成果数据库 > 期刊 > 期刊详情页
A Combined Modulation of Set Current with Reset Voltage to Achieve 2-bit/cell Performance for Filame
  • 期刊名称：IEEE J. Electron Dev. Soc.
  • 时间：2014
  • 页码：2342738-2342740
  • 相关项目：电阻随机存储器三维集成技术研究
作者： Fang Yuan|Zhigang Zhang|Liyang Pan|Jun Xu|
同期刊论文项目
电阻随机存储器三维集成技术研究
期刊论文 6 会议论文 6
同项目期刊论文
Total Ionizing Dose (TID) Effects ofγRay Radiation on Switching Behaviors of Ag/AlOx/Pt RRAM Device
Retentionbehaviour of graphene oxide resistive switching memory
Hybridaluminum and indium conducting filaments for nonpolar resistive switching ofAl/AlOx/indium tin
Interface-InducedTwo-Step RESET for Filament-Based Multi-Level Resistive Memory
A PD-SOI based DTI-LOCOS combined cross isolation technique for minimizing TID radiation induced leakage in high density memory