中文摘要：

抵抗切换记忆多年广泛地基于离子运输和相关电气化学的反应被学习了。为高效的信息存储应用程序利用抵抗切换记忆，包括活动离子种类，离子运输路径，以及这些离子的电气化学的反应行为应该是的离子运输过程的关键信息的彻底的理解提供了材料和设备优化。而且，离子运输被微观结构修正，阶段转变，和精力乐队结构的过程通常伴随变化导致另外的物理性质的进一步的调整，例如，磁力，光排放 / 吸收度，等等，在抵抗切换材料。因此，通过磁性或光的刺激的另外的工具被控制，或在信息存储以外表明额外的功能的新奇抵抗切换记忆，能在各种各样的切换的材料和设备经由明确的离子交通被使可能。在这贡献，在薄电影三明治结构的离子运输和相关抵抗切换现象的机制首先被讨论，在高效、多功能的抵抗切换记忆的发展在最近的进步由一瞥列在后面。离子的一个简短观点基于运输的抵抗切换记忆在这评论的结束被探讨。

英文摘要：

Resistive switching memories based on ion transport and related electrochemical reactions have been extensively studied for years. To utilize the resistive switching memories for high-performance information storage applications, a thorough understanding of the key information of ion transport process, including the mobile ion species, the ion transport paths, as well as the electrochemical reaction behaviors of these ions should be provided for material and device optimization. Moreover, ion transport is usually accompanied by processes of microstructure modification, phase transition, and energy band structure variation that lead to further modulation of other physical properties, e.g., magnetism, optical emission/absorbance, etc., in the resistive switching materials. Therefore, novel resistive switching memories that are controlled through additional means of magnetic or optical stimulus, or demonstrate extra functionalities beyond information storage, can be made possible via well-defined ion transportation in various switching materials and devices. In this contribution, the mechanism of ion transport and related resistive switching phenomena in thin film sandwich structures is discussed first, followed by a glanceat the recent progress in the development of high-performance and multifunctional resistive switching memories. A brief perspective of the ion transport-based resistive switching memories is addressed at the end of this review.