中文摘要：

采用直流磁控溅射法制备了掺钨氧化铟（In2O3：W,IWO）薄膜,研究了制备工艺对薄膜表面形貌和光电性能的影响。结果表明薄膜的表面形貌与其光电性能有着紧密联系。氧分压显著影响薄膜的表面形貌进而对薄膜的光电性能产生影响,同时溅射时间的变化也显著影响薄膜的光电性能：随着氧分压以及溅射时间的升高,薄膜的电阻率均呈现先减小后增大的变化规律,在氧分压为2.4×10-1Pa条件下,制备样品的表面晶粒排布最细密,其电阻率达到6.3×10-4Ω.cm,载流子浓度为2.9×1020cm-3,载流子迁移率为34cm2/（V.s）,可见光平均透射率约为85%,近红外光平均透射率〉80%。

英文摘要：

Tungsten-doped indium oxide（In2O3：W,IWO） films were prepared by DC reactive magnetron sputtering.The effects of oxygen partial pressure and sputtering time on surface morphology and photoelectric properties of IWO films were investigated.The result showed that the film surface morphology was closely related with the photoelectric properties.It was found that photoelectric properties of films were sensitive to the oxygen partial pressure because oxygen partial pressure could significantly influence the surface morphology of films,meanwhile sputtering time also significantly affected photoelectric properties of films： With oxygen partial pressure and sputtering time increased,the resistivity of films were decreased first and then increased.When oxygen partial pressure was 2.4×10-1Pa,the arrangements of the films surface crystal grain were most compact,the as-deposited IWO films at optimum resistivity 6.3×10-4Ω·cm were obtained with the Hall mobility up to its highest value 34cm2/（V·s） and the average transmittance about 85% in the visible light region from 400 to 700nm and over 80% in the near-infrared region from 700 to 2500nm.