中文摘要：

SU-8负性光刻胶可通过UV-LIGA技术得到高深宽比微结构，是微机械系统（MEMS）制造中极具前景的一种技术。目前已有对于SU-8微结构的线宽变化，侧壁倾角，表面粗糙度，增加深宽比等方面的大量研究，但是鲜有对于SU-8微结构侧壁粗糙度的研究。该文从造成微结构侧壁粗糙度的原因入手，讨论了各个工艺参数对侧壁粗糙度的影响，并且通过优化工艺参数达到了降低SU-8微结构侧壁粗糙度的目的。

英文摘要：

UV-LIGA technology based on SU-8 negative photoresist has become a promising technology to fabricate high aspect ratio microstructures. A lot of work has been done to improve SU-8 microstructures through controlling the surface dimension, eliminating the T-top, reducing the surface roughness and increasing the aspect ratio, but few studies have been done to improve the sidewall roughness of SU-8 microstructures. In this paper, we dis- cussed the effects of the process parameter on of the sidewall roughness formation, and reduced the roughness by optimization of process parameters.