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Numerical model of tandem organic light-emitting diodes based on a transition metal oxide interconnector layer
  • ISSN号:1674-4926
  • 期刊名称:《半导体学报:英文版》
  • 时间:0
  • 分类:TN312.8[电子电信—物理电子学] TQ174.758[化学工程—陶瓷工业;化学工程—硅酸盐工业]
  • 作者机构:[1]College of Physics and Information Science, Tianshui Normal University, Tianshui 741000, China, [2]Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
  • 相关基金:Project supported by the National Natural Science Foundation of China (Nos. 11265013, 11264033), the Research Fund for the Doctoral Program of Higher Education of China (No. 20110211 110005), and the Science Research Foundation of Tianshui Normal University (No. TSAl 108).We would like to express our gratitude to our New Zealand friend Peter for his English revision to this paper.
中文摘要:

By utilizing a two-stepprocessto expressthechargegenerationandseparationmechanismof the transition metal oxides(TMOs) interconnector layer, a numerical model was proposed for tandem organic light emitting diodes(OLEDs) with a TMOs thin film as the interconnector layer. This model is valid not only for an n-type TMOs interconnector layer, but also for a p-type TMOs interconnector layer. Based on this model, the influences of different carrier injection barriers at the interface of the electrode/organic layer on the charge generation ability of interconnector layers were studied. In addition, the distribution characteristics of carrier concentration, electric field intensity and potential in the device under different carrier injection barriers were studied. The results show that when keeping one carrier injection barrier as a constant while increasing another carrier injection barrier, carriers injected into the device were gradually decreased, the carrier generation ability of the interconnector layer was gradually reduced, the electric field intensity at the interface of the organic/electrode was gradually enhanced, and the electric field distribution became nearly linear: the voltage drops in two light units gradually became the same.Meanwhile, the carrier injection ability decreased as another carrier injection barrier increased. The simulation results agree with the experimental data. The obtained results can provide us with a deep understanding of the work mechanism of TMOs-based tandem OLEDs.

英文摘要:

By utilizing a two-step process to express the charge generation and separation mechanism of the transition metal oxides (TMOs) interconnector layer, a numerical model was proposed for tandem organic light emitting diodes (OLEDs) with a TMOs thin film as the interconnector layer. This model is valid not only for an n-type TMOs interconnector layer, but also for a p-type TMOs interconnector layer. Based on this model, the influences of different carrier injection barriers at the interface of the electrode/organic layer on the charge generation ability of interconnector layers were studied. In addition, the distribution characteristics of carrier concentration, electric field intensity and potential in the device under different carrier injection barriers were studied. The results show that when keeping one carrier injection barrier as a constant while increasing another carrier injection barrier, carri- ers injected into the device were gradually decreased, the carrier generation ability of the interconnector layer was gradually reduced, the electric field intensity at the interface of the organic/electrode was gradually enhanced, and the electric field distribution became nearly linear: the voltage drops in two light units gradually became the same. Meanwhile, the carrier injection ability decreased as another carrier injection barrier increased. The simulation re- sults agree with the experimental data. The obtained results can provide us with a deep understanding of the work mechanism of TMOs-based tandem OLEDs.

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期刊信息
  • 《半导体学报:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国电子学会 中国科学院半导体研究所
  • 主编:李树深
  • 地址:北京912信箱
  • 邮编:100083
  • 邮箱:cjs@semi.ac.cn
  • 电话:010-82304277
  • 国际标准刊号:ISSN:1674-4926
  • 国内统一刊号:ISSN:11-5781/TN
  • 邮发代号:2-184
  • 获奖情况:
  • 90年获中科院优秀期刊二等奖,92年获国家科委、中共中央宣传部和国家新闻出版署...,97年国家科委、中共中央中宣传部和国家新出版署三等奖,中国期刊方阵“双效”期刊
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  • 被引量:7754