中文摘要：

采用磁控溅射技术制备了Fe84Ga16薄膜并进行了退火处理，用SEM和XRD研究了薄膜的显微结构和内应力，计算了溅射态和退火态薄膜的内应力。结果发现，溅射态和退火态薄膜都以A2相存在，并随着退火温度的升高，择优取向变得愈加不明显。与退火后的薄膜相比，溅射态薄膜内应力更大，且为压应力。低温退火后，薄膜内应力有一定程度的减小，随着退火温度的升高，薄膜内应力又逐渐回升，但回升的幅度不大。

英文摘要：

Fe84Ga16 alloy films were deposited by DC magnetron sputtering and then were annealed. The microstructure of Fe84Ga16 alloy film was investigated by SEM and internal stress in Fe84Ga16 alloy films was detected and calculated by XRD. The results show that the structure of as-deposited and annealled Fes4 Ga16 alloy film are all A2 phases. The higher the annealing temperature, the less preferred orientation. Internal compressive stress in as-deposited Fes4 Ga16 alloy films is larger than that by annealing. After low temperature annealing, the internal stress of film decreases. With the increase of annealing temperature, the internal stress gradually increases, but lower than that as-deposited.