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新型金乙炔咔唑基配合物-钼磷酸纳米杂化LB膜的制备与光电性质
  • 期刊名称:湖北大学学报(自然科学版)
  • 时间:2010.9.9
  • 页码:303-306
  • 分类:O614.123[理学—无机化学;理学—化学] O623.124[理学—有机化学;理学—化学]
  • 作者机构:[1]湖北大学化学化工学院,湖北武汉430062
  • 相关基金:国家自然科学基金项目(20671033)资助
  • 相关项目:金属有机-多酸共价杂化高效三线态发光材料的设计与合成
中文摘要:

以刚棒状金乙炔咔唑基配合物(OMA)作有机组分,Keggin结构多金属氧酸盐钼磷酸H3PMo12O40作无机组分,用LB技术制备新型有机-无机纳米杂化LB膜.用-πA曲线、UV-Vis吸收光谱、荧光光谱(FS)、原子力显微镜(AFM)、扫描隧道显微镜(STM)进行表征,结果表明:标题LB膜具有交替排列的纳米层状结构,OMA/H3PMo12O40单层膜呈现半导体特性,当监控电压在-3- +3 V时,其隧道电流I值为±100 nA.

英文摘要:

A new organometallic/inorganic nanohybrid LB film consisting of rigid-rod gold alkynyl complex(OMA) as the organic composite,Keggin type polyoxomexalate H3PMo12O40 as the inorganic composite,was prepared and characterized by π-A isotherms,UV-vis absorption spectra,fluorescence spectra(FS),atomic force microscopy(AFM),scanning tunneling microscopy(STM) and surface photovoltage spectroscopy(SPS).The experimental results indicated that the title LB film showed the lamellar structure:the monolayer of H3PMo12O40 alternating with bilayers of the organometallic com-pound,and that OMA/H3PMo12O40monolayer film showed electronic conductivity of semiconductor,and the tunneling current amounted to ±100 nA when the voltage was set at ±3 V.

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