为了提高镍钯金电路板(PCB-ENEPIG)表面的耐腐蚀性能,选用有机膦酸缓蚀剂羟基乙叉二膦酸(HEDP)与氨基三亚甲基膦酸(ATMP)进行复配,以浸泡法在其表面形成自组装膜。通过电化学交流阻抗谱(EIS)、金相显微镜、扫描电镜、量子化学研究了该有机保护膜的耐腐蚀性能和缓蚀过程机理。结果表明:该复合型有机膦酸封孔剂对PCB-ENEPIG具有较好的缓蚀作用,膦酸通过P原子与金属Pd的互相作用而吸附于金属表面形成自组装膜;当HEDP浓度1.0g/L,HEDP与ATMP质量比为2:1复配时所配制的封孔剂耐腐蚀性能最优。
In order to improve the corrosion inhibition of Ni-Pd-Au plated circuit board (PCB-ENEPIG), a self-assemble film was formed on its surface by immersion in mixture solution of 1-hydroxyethylidene-1, 1- diphosphonic acid (HEDP) and amino trimethylene phosphonic acid (ATMP). Electrochemical impedance spectroscopy, quantum chemistry, metallographic microscope and scanning electron microscope were used to study the corrosion inhibition performance and process mechanism of self-assemble film. Result showed that the composite organic phos- phate acid sealing agent had better corrosion inhibition effect on the PCB- ENEPIG, and phosphate acid was adsorbed on the metal surface through the interaction between its phosphorus atom and palladium, consequently forming a self-assemble film. The obtained sealing agent had the best corrosion inhibition when the content of HEDP was 1.0 g/L and the mass ratio of HEDP to ATMP was 2 : 1.