中文摘要：

在本征硅片表面设计并制作了一种圆柱孔形抗反射微结构。基于严格耦合波分析方法,通过数值计算及模拟仿真确定了微结构最优参数组合,设计反射率小于3%。应用二元曝光、湿法腐蚀和反应离子刻蚀技术制作了单面和双面抗反射周期阵列微结构。根据测试结果判断反应气体流量、射频功率及工作气压等工艺参数对微结构形貌及侧壁陡直度具有很大影响,经过实验分析确定了最佳工艺参数组合。采用热场发射扫描电子显微镜和白光干涉仪对该结构进行形貌表征,利用显微成像红外光谱仪对其反射率进行测量。最终结果表明,相比于单面微结构和无结构本征硅片,双面微结构抗反射效果最好,得到反射率为8%左右,基本达到抗反射设计要求。

英文摘要：

The antireflective microstructure with well-defined,periodic cylindrical bore array was designed and fabricated by binary exposure, wet etching and reactive ion-etching, on the single and/or double sides of intrinsic silicon substrate. The dependence of the reflectance on the microstructure＇ s geometry, including the fill-factor, peri- od, etching-depth and steepness ,was theoretically calculated in rigorous coupled wave analysis （RCWA）, numeri- cally simulated with software MATLAB and experimentally evaluated for optimization design. The influence of the etching conditions, such as the reactive gas flow-rate, RF-power and pressure, on the morphology and sidewall steep- ness was investigated with scanning electron microscope, energy dispersive spectroscopy, and interferometer. The re- flectivity of the single-and double-sided microstructures, fabricated under the optimized etching conditions, was measured with microscopic imaging infrared spectrometer. The average reflectivity in infrared band （ 8% ） of the double-sided microstructure was lower than that of the single-sided microstructure and the intrinsic silicon.