中文摘要：

采用射频磁控溅射法成功制备了（111）取向的Pt薄膜。在研究退火工艺对Pt薄膜（111）取向生长的影响基础上，着重研究了退火工艺对Pt薄膜与缓冲层Pr薄膜间的互扩散及薄膜物相、结构的影响规律。结果表明：250℃保温5至25小时，Pt薄膜沿（111）择优取向生长，但保温时间对取向生长的影响不大，此时薄膜为立方结构；当500℃再分别保温2h和4h时，最初沿（111）取向生长的Pt薄膜与Pr薄膜发生互扩散现象，生成BFe结构的PrPt相，保温2h时，除生成PrPt相外，还可能存在一定量的取向Pt，保温4h时，薄膜中只存在PrPt相。本实验为制备（111）强烈取向Pt薄膜开拓了一条新的工艺及方法，同时为控制Pt薄膜的结构与性能、进行开发应用提供了实验依据。

英文摘要：

Taking Pr film as buffer layer, strongly （111） oriented Pt films were prepared on glass substrates by R F magnetron sputtering. On the basis of studying the influences of annealing treatment on （111） prefered orientation, the effect of annealing times and temperature on phases and microstructures of Pt/Pr films by using XRD and SEM techniques was investigated. The results indicated that the annealing treatment process had little influences on （111） preferential orientation of Pt films, when annealing times were from 5 to 25 hours under 250℃; When annealing times were 2 and 4 hours under 500℃, inter-diffusion between Pt and Pr films, and PrPt phase was observed; When 2 hours, a few Pt phases appeared except PrPt phases in the films, and When 4 hours, there only was PrPt phases. This experiment supplied a new process for preparing （111） oriented Pt films, and afforded experimental proofs for controlling structure, properties and application development of its.