中文摘要：

系统地研究产业化甚高频等离子体增强化学气相沉积法制备p型a-SiO2：H薄膜的工艺，并将P型a-SiOx：H作为a-Si：H单结电池的窗口层，研究其对电池初始和稳定性能的影响。研究表明CO2与SiH4流量比（r（CO2/SiH4））、射频功率对a-SiOx：H薄膜的光电性能影响最大，r（CO2/SiH4）=1．5和功率=444W时制备的P型a-SiOx：H薄膜材料性能最优。相对于a-SiCx：H的p型窗口层，采用优化的p型a-SiOx：H薄膜作为窗口层的a-Si：H单结电池具有相同的初始发电功率，但具有更好的稳定性能，降低了光致衰减。电池的光致衰减率相对降低11．2％，功率输出的稳定性相对提升2％。

英文摘要：

A series of p type a-SiOx ： H single films were prepared by VHF PECVD on large size substrate, a-Si ： H single junction solar cells with different p type a-SiOx ： H window layer were also prepared and these cell＇ s initial and stable I-V characteristics were compared. The results showed that the p type a-SiOx ：H film optical and electrical performance were changed with various r（CO2/SiH4）and RF power. Film with r（CO2/SiH4）=1.5 and RF power=444 W shows the best performance. Compared to a-Si： H single junction solar cell with p type a-SiCx： H, a-Si： H single junction solar cell with p type a-SiOx： H obtained the same initial power and better LID （Light Induced Degradation） performance. The LID ratio of a-Si： H single junction solar cell with p type a-SiOx ：H is 11.2% lower and stable power is 2% higher than the cell with p type a-SiCx ：H.