中文摘要：

室温下在玻璃衬底上，采用射频磁控溅射GZO（Ga掺杂ZnO）膜和离子束溅射Ag膜的方法，制备了GZO／Ag／GZO三层膜，分析了真空退火温度对样品结构、光学、电学性能的影响。结果显示：随着退火温度的升高，Ag层的结构得到明显改善，但GZO层结晶度受到了Ag扩散的影响。经过350℃退火后，样品在可见光区平均透射率达92．63％，电阻率由8．0×10^-5Ω·cm降至4．0×10^-5Ω·cm。

英文摘要：

GZO/Ag/GZO three-layer films were prepared on glass substrates by radio frequency magnetron sputtering of GZO layers and ion beam sputtering of Ag layers at room temperature. The effects of vacuum annealing temperature on the structural, optical and electrical properties of GZO/Ag/GZO three-layer films were investigated. The results show that the structure of Ag layer is significantly improved with the increasing of annealing temperature, but the crystallinity of GZO layers is affected by diffusion of Ag. After annealing treatment at 350℃, the resistivity is decreased from 8.0 × 10^-5 Ω·cm to 4.0×10^-5 Ω·cm, and an average transmittance of 92.63 % in the visible range of GZO/Ag/GZO films is obtained.