中文摘要：

A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) based on an intra-cavity contacted structure is fabricated.A threshold current of 1.5 mA for a 22 μm oxide aperture device is achieved,which corresponds to a threshold current density of 0.395 kA/cm 2.The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed operation.While under continuous-wave (CW) operation,the maximum power attains 10.5 mW.Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from 12℃ to 96℃ and good reliability under a lifetime test.There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current.

英文摘要：

A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well （QW） vertical-cavity surface-emitting laser （VCSEL） based on an intra-cavity contacted structure is fabricated. A threshold current of 1.5 mA for a 22 μm oxide aperture device is achieved, which corresponds to a threshold current density of 0.395 kA/cm2. The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed opera- tion. While under continuous-wave （CW） operation, the maximum power attains 10.5 mW. Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from -12°C to 96 °C and good reliability under a lifetime test. There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current.