针对融合射频识别(RFID)的无线温度传感器节点设计的需求,采用0.18μm 1P6M台积电CMOS工艺,设计了一种低功耗集成温度传感器。该温度传感器首先将温度信号转换为电压信号,然后通过经压控振荡器将电压信号转换为受温度控制的频率信号,再通过计数器,将频率信号转换为数字信号。传感器电路利用MOS管工作在亚阈值区,并采用动态阈值技术获得超低功耗。测试结果显示:所设计的温度传感器仅占用0.051 mm2,功耗仅为101 n W,在0~100℃范围内误差为-1.5~1.2℃。
Aiming at design demand for wireless temperature sensor node which integrates RFID,design a low power consumption integrated temperature sensor,using 0. 18 μm 1P6 M CMOS process,design an integrated temperature sensor with low power consumption. Firstly,it transfers temperature signal to voltage signal,which is then converted to frequency signal by a voltage-controlled oscillator and the frequency signal is finally converted to digital signal by counter. Sensor circuit works in sub-threshold region and employs dynamic threshold-voltage to achieve ultra-low power consumption. Later period test result show that the designed temperature sensor only covers an area of 0. 051 mm2,consumes only 101 n W power with an error- 1. 5 ~ 1. 2 ℃,at range of 0~ 100 ℃.