中文摘要：

利用脉冲激光沉积的方法制备掺铒Si/Al2O3多层结构薄膜,获得了由纳米结构的Si作为感光剂增强的Er3＋在1.54μm高效发光.利用拉曼散射、高分辨透射电镜和光致发光测量研究了在不同退火温度下（600—1000℃）纳米结构Si层的结晶形态变化,及对Er3＋在1.54μm的发光的影响特征.研究发现最佳发光是在退火温度600—700℃.在这个条件下纳米Si的尺寸和密度,Si和Er的作用距离以及Er3＋发光的化学环境得到了优化.进一步,光致发光瞬态衰减谱研究表明,当纳米Si尺寸小时,衰减遵循单指数模式（慢过程）,当纳米Si尺寸大时,衰减遵循双指数模式（快过程和慢过程）,其中衰减中快过程来自类体Si的对激发态Er3＋去激发过程,慢过程对应典型的纳米Si体系衰减过程.

英文摘要：

The crystallization evolution of the nanostructured Si （ns-Si） in the Er-doped Si/Al2O3 multilayer fabricated by using pulsed laser deposition technique and its effects on the Er^3＋ luminescence at 1.54 um are investigated. Raman scattering and transmission electron microscopy measurements are used to characterize the microstructure evolution of the ns-Si during annealing treatment processes. The maximum photoluminescence intensity is obtained in the sample with ultrathin ns-Si sublayers annealed at 600--700℃, where the density, the size of Si nanocrystals, the interaction distance, and the optimized local environment for effectively activating the Er^3＋ are well controlled. From the analysis of the decay process of time-dependent luminescence, two decay channels are considered, the fast and slow decay channels. The bulk-like Si is responsible for the fast process and the Si nanocrystals are responsible for the slow decay process.