中文摘要：

使用溶胶-凝胶法在硅片衬底上制备出不同浓度Tb3＋掺杂的Zn Al2O4∶Tb3＋薄膜,使用X射线衍射（XRD）、热重-示差扫描量热（TG-DSC）、扫描电镜（SEM）以及荧光光谱分析（PL）进行了表征。结果表明,在700℃煅烧温度下得到的Zn Al2O4∶Tb3＋薄膜能够形成良好的锌铝尖晶石物相。700℃煅烧所得样品以薄膜形态附着在硅片衬底上,薄膜表面存在小尺寸裂纹,且与衬底之间附着良好。在232 nm紫外光激发下,样品的发射光谱由位于489 nm、543 nm、587 nm和620 nm的四个发射峰组成,分别对应Tb3＋的5D4→7FJ（J=6,5,4,3）的跃迁,并且当Tb3＋掺杂浓度为5at%时,样品的发光强度达到最大值,继续增加Tb3＋浓度,则会发生浓度猝灭现象,发光强度降低。

英文摘要：

Tb3 ＋-doped Zn Al2O4 thin films were prepared by sol-gel method on silicon wafers. The properties of Zn Al2O4∶ Tb3 ＋films were characterized by X-ray diffraction（ XRD）,thermogravimetry and differential scanning calorimetry（ TG-DSC）,scanning electron microscopy（ SEM） and photoluminescence spectrum（ PL）. The results show that the films attached on the silicon wafers are flaked with a good adhesion after the films are calcined at 700 ℃. The emission spectrum consists of four characteristic emission of Tb3 ＋at 489 nm（5D4→7F6）,543 nm（5D4→7F5）,587 nm（5D4→7F4）,620 nm（5D4→7F3）,respectively. The Zn Al2O4∶ Tb3 ＋thin films revealed that the strongest emission intensity is at543 nm when the Tb3 ＋concentration reaches 5at%,and that the concentration quenching will occur when Tb3 ＋concentration increases.