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几种湍流模型在晶体生长模拟中的应用及比较
  • 期刊名称:工程热物理学报
  • 时间:0
  • 页码:1500-1503
  • 语言:中文
  • 分类:O782[理学—晶体学]
  • 作者机构:[1]西安交通大学能源与动力工程学院,陕西西安710049, [2]浙江大学硅材料国家重点实验室,浙江杭州310058, [3]九州大学应用力学研究所,福冈816—8580日本
  • 相关基金:国家自然科学基金(No.50876084);教育部新世纪优秀人才支持计划(No.NCET-08-0442);陕西省自然科学基础研究计划(No.SJ08E201):
  • 相关项目:晶体硅定向凝固过程中凝固界面形状及热应力场的动力特性
中文摘要:

利用块结构化网格对一典型工业用单晶硅CZ结晶炉进行离散,对炉内硅熔体的对流换热、所有部件内的传导换热和炉腔内的辐射换热进行整体耦合求解。针对大尺寸坩埚内的硅熔体湍流,分别应用低雷诺数κ-ε模型、标准κ-ε模型和κ-ε两层湍流模型进行模化。通过比较分析发现,应用三种湍流模型都能预测高温硅熔体的湍流结构,且基本一致,但备模型中对近固壁湍流的不同处理方法对固液凝固界面形状的模拟结果有较显著的影响。

英文摘要:

A typical industry-scale CZ furnace for growing single crystal of silicon was numerically discretized with multi-block structured grids. All heat transfer modes in the furnace, including the melt convection, solid conduction and surface radiation, are solved together in a conjugated way. To model the melt turbulence of Si in the crucible, a few turbulence models were deliberately selected and applied. These turbulence models include the low Reynolds number κ-ε model, the standard κ-ε model and a modified two-layer turbulence model. The simulation results obtained with these turbulence models were compared. The comparison shows that the melt flow structures predicted with these turbulence models are quite similar, while the difference in the predicted crystal-melt interface shape is obvious due to different treatment of the near wall turbulence in each model.

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