中文摘要：

基于黑硅材料的发展,讨论了国内外在黑硅制备技术方面的研究进展,包括反应离子刻蚀法、飞秒激光脉冲法、电化学刻蚀法及金属辅助刻蚀法,总结了各种工艺在应用上的特点,对黑硅材料当前取得的应用及发展进行了综述。结果表明:黑硅材料的特殊结构能够极大降低硅表面光反射,有效提高硅太阳能电池转换效率;其特殊光敏性可应用于光波探测器;表面各向异性的黑硅在红外吸收中可以产生太赫兹辐射。当前飞秒激光脉冲法制备的黑硅材料体现了很好的光敏性,并且有望直接嵌入目前半导体制造工艺,因此备受青睐,然则其制备成本较高;相比之下,电化学刻蚀法则设备简单、成本较低,亦颇具研究前景。最后,展望了国内黑硅材料的发展趋势。

英文摘要：

Based on the development of black silicon,the present preparation techniques of black silicon were reviewed,including reactive ion etching method,femtosecond laser pulses method,electrochemical etching method and metal assisted etching method.The application and the development of black silicon showed that the special structure of the black silicon could greatly reduce the silicon surface reflection and effectively improve the conversion efficiency of silicon solar cells.Black silicon could generate teraher...