中文摘要：

一极端薄(3 nm ) 洞堵住层， 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP ) 在 8-hydroxyquinoline 的 electron-transportlayer 之间被插入铝(Alq_3 )and4-(dicyan-omethylene )-2-t-butyl-6(1,1,7,7-tetramethyljulolidy!-9-enyl)-4H-pyran (DCJTB ) dopedpoly-vinylcarbazole (PVK ) 层。设备结构是 ITO/PVK：DCJTB (0.25 wt 百分比)/BCP (3nm )/Alq_3 (8 nm )/AI。因为 BCP 的厚度在福斯特精力转移的规模上是批评半径，不完全的精力转移将通过 BCP 层从 PVK 发生到 Alq_3 然后从 Alq_3 回到 DCJTB。而且， BCP 能阻止向前移居接近一个洞，并且因此限制在排放层形成的激子。优化设备给纯并且 voltage-independentemission。CIE 坐标被保留在(0.32， 0.32 ) ，并且亮度在 18 Vwith 到达了 270 cd/m~2 0.166 cd/A 的效率。

英文摘要：

An ultra-thin （3 nm） hole blocking layer, 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline （BCP） was inserted between the electron-transport layer of 8-hydroxyquinoline aluminum （Alq3） and 4-（dicyanomethylene）-2-t-butyl-6（1,1,7,7-tetramethyljulolidyl-9- enyl）-4H-pyran （DCJTB） doped poly-vinylcarbazole （PVK） layer. The device structure was ITO/PVK： DCJTB（0.25 wt%）/BCP（3 nm）/Alq3（8 nm）/Al. Because the thickness of BCP was on the scale of Forster energy transfer critical radius, incomplete energy transfer would occur from PVK to Alq3 and then from Alq3 back to DCJTB through BCP layer. Furthermore, BCP can block a hole from migrating ahead, and thus confine excitons formed in the emission layer. The optimized device gives pure and voltage-independent emission. The CIE coordinate was kept at （0.32, 0.32）, and the brightness reached 270 cd/m^2 at 18 V with the efficiency of 0.166 cd/A.