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Analysis and reduction of the gate forward leakage current in AlGaN/GaN HEMTs employing energy-band
  • ISSN号：0038-1101
  • 期刊名称：Solid-State Electronics
  • 时间：0
  • 页码：76-80
  • 相关项目：高性能AlGaN/GaN复合阳极场控功率整流器新结构及模型
作者： Chen, Wanjun1|Zhang, Jing1|Zhang, Bo1|Li, Zhaoji1|
同期刊论文项目
高性能AlGaN/GaN复合阳极场控功率整流器新结构及模型
期刊论文 11 会议论文 2 专利 4
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