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丝网印刷工艺制备铜铟镓硒（CIGS）薄膜
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：O56[理学—原子与分子物理;理学—物理]
  • 作者机构：[1]四川大学原子与分子物理研究所,四川成都610065, [2]电子科技大学微电子与固体电子学院,四川成都610054
  • 相关基金：国家自然科学基金（编号：10774103）.
作者： 赵林娜[1,2], 王影[2], 周爱军[2], 李晶泽[2], 高涛[1]
关键词： 丝网印刷工艺, 铜铟镓硒, 硒化, 薄膜, screen printing method, CIGS, selenization, thin tilm
中文摘要：

通过球磨CuIn0.75Ga0.25Se2颗粒获得纳米粉末,采用丝网印刷工艺制备CIGS薄膜,研究了硒化温度和不同高温后处理方式对CIGS薄膜表面形貌及晶体结构的影响.结果表明,采用丝网印刷工艺可以制备出均匀致密单一相的CIGS薄膜.硒化的温度越高,薄膜的结晶性越好.在600℃下,采用硫化锑（Sb2S3）代替硒源可以有效地改善CIGS薄膜的结晶性.

英文摘要：

CuIn0.75Ga0.25Se2 nano-powder particles are obtained by milling ball. CIGS thin films are prepared by screen-printing with the aim of investigating the effects of selenium and different high temperature treatments on the crystal structure and surface morphology. The results indicate that compact and single phase CIGS thin film can be prepared by using the screen printing process. The crystalline is demonstrated to become better with the increasing of the selenization temperature. To increase the CIGS thin-film crystalline, antimony sulfide （Sb2S3） is proved to be more effective than selenium source under a temperature of 600℃.

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406