中文摘要：

确定阴极材料的光子吸收系数，是开展变掺杂GaAs光电阴极光电发射性能理论研究的重要条件之一。分析了变掺杂阴极的结构特点，提出了材料等效光子吸收系数的概念，并给出了等效光子吸收系数的计算方法。设计了变掺杂阴极样品并进行了阴极Cs、O激活实验，理论计算了材料的等效光子吸收系数并对激活后的阴极量子效率进行了拟合仿真，拟合曲线同实验曲线非常一致，证明了该计算方法的有效性。

英文摘要：

To ascertain the photon absorption coefficient of cathode material is one important condition of the theoretical investigation on photoemission performance of varied doped GaAs photocathodes. In this paper, the structure feature of varied doped cathode was analyzed, a concept of equivalent photon absorption coefficient was presented and the calculation method of equivalent photon absorption coefficient was provided. One varied doped GaAs photocathode sample was designed and the Cs、O activation experiment was carried out. The cathode quantum efficiency after activation was fitted by theoretical formula with the calculated equivalent photon absorption coefficient of the sample material. The fitting curve is in accordance with the experimental curve, which certifies the availability of the calculation method.