中文摘要：

为了揭示Al—C—N非晶薄膜的结构、导电性以及它们之间的关系，本文采用非平衡磁控溅射沉积技术在Si（100）基体上沉积得到了不同Al含量的Al-C—N薄膜。使用X射线光电子能谱仪、X射线衍射和高分辨透射电镜研究了所制备薄膜的相组成和微观结构。采用四引线法测定了薄膜电阻率-温度关系和霍尔电阻率-磁场关系。实验结果表明，所制备薄膜为非晶结构，结构致密，没有明显的缺陷，薄膜中主要的化学键为C-N，C-C和Al—N键。薄膜的成分对其导电性能有着明显的影响，当Al含量较低时，Al—C-N薄膜为P型半导体；当Al含量较高时薄膜转变为绝缘体。

英文摘要：

The Al-C-N composite films with different M contents were deposited on Si（100） substrates by closedfield unbalanced reactive magnetmn sputtering in a mixture of argon and nitrogen. The microstructures and properties were characterized with X-ray diffraction, X-ray photoelectron spectroscopy Raman spectroscopy, field-emission scanning electron microscopy high resolution transmission electron microscopy and conventional probes. The results show that the amorphous Al-C-N films are compact with unobservable defect density, and that the C-N, C-C and Al-N bonds dominate in the films. In addition, the M content strongly affects its electrical property. For example, low Al content resulted in semi-conducting films;whereas high M content produced the insulating films.