分别利用磁控溅射沉积、溶胶-凝胶浸涂及旋涂等方法在氧化铟锡(indium tin oxide,ITO)导电玻璃上得到籽晶层,然后通过低温水热法获得了ZnO纳米线阵列。通过X射线衍射、扫描电镜、透射电镜、光致发光谱等测试手段对不同方法获得的ZnO籽晶和纳米线阵列进行了表征和研究。进而在光刻有银电极的ITO玻璃基片上制备出紫外探测原型器件,测试了其紫外响应特性,并结合ZnO纳米线表面特性讨论了器件的紫外响应机理。结果表明:溶胶-凝胶旋涂获得的籽晶最小,生长出的纳米线长径比最高,直径最细,取向性也最好。对应的室温光致发光谱在近带边有优良的激发峰,而可见区的发光峰受到明显抑制。旋涂和浸涂籽晶获得的紫外探测样品响应迅速,但恢复较慢;磁控溅射籽晶样品有较优的响应和恢复特性,但信号强度较低。
Zinc oxide (ZnO) seeds were firstly deposited on an indium tin oxide (ITO) glass substrate by magnetron sputtering way,sol-gel dip-coating and sol-gel spin-coating process,respectively,and then ZnO nanowire arrays were prepared by a low temperature hydrothermal method.The characteristics of these ZnO nanowire arrays were determined by X-ray diffraction,scanning electron microscopy and photoluminescence(PL) spectrum.The ultraviolet detecting devices were prepared on the ITO glass with a silver electrode.The ultraviolet detecting property was examined and the responding mechanism was discussed according to the surface properties of ZnO nanowires.The results show that the nanowires grown from the smallest seeds by sol-gel spin-coating have the highest aspect ratio,the samllest diameters and the best orientation.The corresponding PL spectra show that the sample has an excellent near edge emission peak with the depressed visible emission.The samples from the seeds obtained by sol-gel dip-coating and spin-coating can respond easily,but recover rather slowly.The samples from the seeds obtained by magnetron sputtering have a good ultraviolet corresponding and recovering characters,but a lower signal intensity.