中文摘要：

SiC单晶具有良好的物理和机械性能,在大功率器件和IC行业有广泛的应用。但由于高的硬度和脆性,使其加工过程变得非常困难。切割力对SiC单晶片的切割质量、切割效率和切割过程的稳定性具有重要的影响,因此研究切割过程的切割力有重要的意义。分析了SiC单晶切割过程影响切割力的主要因素,采用中心复合设计法（CCD）进行了试验设计,考察线锯速度、工件进给速度、工件转速、线锯张紧力4个因素对切割单晶SiC切割力的影响。采用响应面分析法（response surface methodology,RSM）对金刚石线锯切割SiC单晶体的工艺参数进行分析优化,建立了单晶SiC切割力模型,并进行方差分析,表明了模型的可行性。并通过实验验证,结果表明该模型能有效的对切割过程中的切割力进行预测。

英文摘要：

SiC Monocrystal is widely used in high power devices and IC industry due to its good physical and mechanical properties. However, the processing process of SiC mortpsrystal wafers becomes very difficult due to its high hardness and brittleness. The cutting force has an important influence on the quality, productivity and stability of cutting process in SiC monocrystal wafer processing; therefore, it is significant to study the cutting force of the cutting process. This paper analyzes the influence factors on cutting force of the cutting process, the experiment scheme is designed by using Central Composite Design （CCD） , and the wire saw velocity, part feed rate, part rotation speed and wire saw tension are considered as the factors on the cutting force of SiC processing. Response Surface Methodology （RSM） is used to optimize the processing parameters and the cutting force model is developed. Analysis of variance （ANOVA） is also carried out to verify the feasibility of the cutting force model. The experiments results show that the proposed model can predict the cutting force effectively in SiC monocrystal wafers cutting process.