中文摘要：

在 ₂ S ₃ 性变态经由一个运动地控制的热免职过程被综合，他们的 optoelectronic 特征系统地被探索。生长机制被归因于联合运动动态，水晶美容精力，和表面粗糙。二个陷井劝诱了排放乐队经由低温度阴极射线发光(CL ) 被证实学习。而且， nanowire 连接证明作为与直手臂相比，退化 photodetection 表演归因于从 kinked 区域测量的一个导致压力的额外的系列电阻。无机的 nanostructures 和他们的 optoelectronic 性质的详细探索的井可控制的形状为他们的进一步实际的应用是特别地珍贵的。

英文摘要：

High quality In2S3 kinks were synthesized via a kinetically controlled thermal deposition process and their optoelectronic characteristics were systematically explored. The growth mechanism was attributed to the combination of kinetic dynamic, crystal fadal energy, and surface roughness. Two trap induced emission bands were evidenced via a low temperature cathodoluminescence （CL） study. Furthermore, the nanowire junctions demonstrated a degenerative photodetection performance, as compared to the straight arms, attributed to a stress-induced extra series resistance measured from the kinked area. The well-controllable shape of the inorganic nanostructures and the detailed exploration of their optoelectronic properties are particularly valuable for their further practical applications.