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TiN/HfO2/SiO2/Si堆栈中TiN/HfO2界面的能带对准研究
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2012.3.5
  • 页码：102906-
  • 相关项目：高k栅介质/金属栅结构CMOS器件的界面特性与有效功函数控制技术的基础研究
作者： Ma Xueli|Xiang Jinjuan|Chen Dapeng|Ye Tianchun|
同期刊论文项目
高k栅介质/金属栅结构CMOS器件的界面特性与有效功函数控制技术的基础研究
期刊论文 18 会议论文 5
同项目期刊论文
Reexamination of band offset transitivity employing oxide heterojunctions
A possible origin of core-level shift in SiO2/Si stacks
Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks
Modulation of the effective work function of TiN metal gate for PMOS application
Remote scavenging technology using a Ti/TiN capping layer interposed in a metal/high-k gate stack
Modulation of the effective work function of a TiN metal gate for NMOS requisition with Al incorporation
An effective work-function tuning method of nMOSCAP with high-k/metal gate by TiN/TaN double-layer stack thickness
The effects of process condition of top-TiN and TaN thickness on the effective work function of MOSCAP with high-k/metal gate stacks
Effect of low temperature annealing on the electrical properties of an MOS capacitor with a HfO2 dielectric and a TiN metal gate
Analysis of flatband voltage shift of metallhigh-k/SiO2/Si stack based on energy band alignment of entire gate stack