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A possible origin of core-level shift in SiO2/Si stacks
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2013.1.28
  • 页码：041603-041603
  • 相关项目：高k栅介质/金属栅结构CMOS器件的界面特性与有效功函数控制技术的基础研究
作者： Ma Xueli|Zhao Chao|Chen Dapeng|Ye Tianchun|
同期刊论文项目
高k栅介质/金属栅结构CMOS器件的界面特性与有效功函数控制技术的基础研究
期刊论文 18 会议论文 5
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