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First-principles study of helium clustering at initial stage in ThO2
  • ISSN号:1674-1056
  • 期刊名称:《中国物理B:英文版》
  • 时间:0
  • 分类:O562.1[理学—原子与分子物理;理学—物理] TB383[一般工业技术—材料科学与工程]
  • 作者机构:[1]Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China, [2]Key Laboratory of lnterfacial Physics and Technology, Chinese Academy of Sciences, Shanghai 201800, China, [3]University of Chinese Academy of Sciences, Beijing 100049, China
  • 相关基金:Project supported by the Program of International S&T Cooperation,China(Grant No.2014DFG60230); the National Natural Science Foundation of China(Grant Nos.11605273,21571185,U1404111,11504089,21501189,and 21676291); the Shanghai Municipal Science and Technology Commission,China(Grant No.16ZR1443100); the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDA02040104).
中文摘要:

在钍二氧化物的氦原子的聚类的行为被第一原则的计算调查了。结果显示出那他原子趋于在一个八面的空隙的地点(OIS ) 附近形成簇。作为集中他在 ThO 2 增加的原子,紧张导致了由他原子增加和八面的空隙的地点不足够大提供大簇,例如一他 hexamer。我们认为三个不同 Schottky 缺点(SD ) 是配置(SD 1, SD 2, 和 SD 3 。什么时候他原子位于 SD 地点,紧张导致了由他原子被释放,加入和有约束力的精力减少。他更整齐是在 SD 1 的最稳定的簇。大他聚类,例如一他 hexamer,在 SD 也是稳定的。

英文摘要:

The clustering behavior of helium atoms in thorium dioxide has been investigated by first-principles calculations. The results show that He atoms tend to form a cluster around an octahedral interstitial site(OIS). As the concentration of He atoms in ThO2 increases, the strain induced by the He atoms increases and the octahedral interstitial site is not large enough to accommodate a large cluster, such as a He hexamer. We considered three different Schottky defect(SD) configurations(SD1, SD2, and SD3). When He atoms are located in the SD sites, the strain induced by the He atoms is released and the incorporation and binding energies decrease. The He trimer is the most stable cluster in SD1. Large He clusters, such as a He hexamer, are also stable in the SDs.

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期刊信息
  • 《中国物理B:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编:欧阳钟灿
  • 地址:北京 中关村 中国科学院物理研究所内
  • 邮编:100080
  • 邮箱:
  • 电话:010-82649026 82649519
  • 国际标准刊号:ISSN:1674-1056
  • 国内统一刊号:ISSN:11-5639/O4
  • 邮发代号:
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  • 被引量:406