中文摘要：

采用射频磁控溅射方法在玻璃基片上制备了镓掺杂氧化锌（Ga∶ZnO）透明导电薄膜,通过XRD、XPS、四探针仪和分光光度计等表征技术,研究了衬底温度对Ga∶ZnO薄膜结构、组分、光学和电学性质的影响。结果表明：所有样品均为具有（002）择优取向的高质量透明导电薄膜,其晶体结构和光电性能与衬底温度密切相关。当衬底温度为673 K时,所制备的Ga∶ZnO薄膜具有最大的晶粒尺寸（72.6 nm）、最低的电阻率（1.3×10-3Ω.cm）、较高的可见光波段平均透过率（88.9%）和最大的品质因数（1.4×10-2 S）,其光电综合性能最佳。同时采用外推法计算了Ga∶ZnO薄膜的光学能隙,结果显示随着衬底温度的升高,薄膜的光学能隙单调增加。

英文摘要：

Highly conduct gallium-doped zinc oxide（Ga∶ ZnO）transparent thin films were prepared on the glass substrates by radio-frequency（RF） magnetron sputtering.The deposited films were characterized by X-ray diffraction（XRD）,X-ray photoelectron spectroscopy（XPS）,four-point probe and spectrophotometer,respectively.The influence of the substrate temperature on the structural,compositional,optical and electrical properties of the films was investigated.The results show that high quality Ga∶ ZnO films oriented with their crystallographic c-axis perpendicular to the substrates are obtained.The crystal structures and optoelectrical properties of the films are highly dependent on the substrate temperature.The Ga∶ ZnO films fabricated at the substrate temperature of 673 K exhibit the best optoelectronic properties,which have the maximum crystallite size（72.6 nm）,the lowest resistivity（1.3×10-3 Ω · cm）,the higher average visible transmittance（88.9%） and the highest figure of merit（1.4×10-2 S）.Furthermore,the energy gap of the films was calculated by extrapolation method.A blue shift of the optical energy gap is observed with an increase in the substrate temperature.