采用三电极系统,在超声辅助下,以Mo薄片为柔性基底制备了CuInSe2(CIS)前驱体薄膜,经热处理得到了具有黄铜矿型晶体结构的CIS薄膜。研究了热处理温度,保温时间和升温速率对CuInSe2薄膜成分、物相及形貌的影响。结果表明:热处理使薄膜物相变得纯净,随着热处理温度的提高、保温时间的延长和升温速率的减慢,结晶度提高。温度过高、时间过长制备的CIS薄膜表面有大颗粒出现以至表面粗糙度增加、颗粒不均匀。
CuInSe2(CIS) precursor films were produced on Mo substrate using one-step electrodeposition(ED) technique with ultrasound in three-electrode potentiostatic device,the chalcopyrite structure CIS films were formed by annealing CuInSe2 precursor.The influences of heating temperature,holding time and heating rate on films' composition,phase and morphology were studied.The results indicates that the films show a better phase purity,crystallinity and a larger grain size as the heating temperature,holding time increasing and the heating rate decreasing.Thin film surface is not smooth and uniform when the heat treatment temperature is too high,too fast or the holding time is too long.