采用热丝化学气相沉积法在玻璃衬底上沉积硅薄膜,采用扫描电子显微镜、拉曼光谱分析表征样品的形貌和结晶性,较为系统地研究了硅烷浓度、衬底到热丝的距离对硅薄膜生长过程及各种性质的影响,结果表明,较高的衬底温度及较低的硅烷浓度有利于薄膜的结晶。
Silicon film can be prepared by the hot-wire chemical-vapor deposition method(HWCVD) on glass substrates. Then it is observed using SEM and Raman spectrum, the influence of oncentration of silane and the distance between film and substrate on the properties of the film is studied systematically. In those experiments, concentration of silane and the distance between film and substrate alters under the same conditions, it is found that higher temperature of substrate and lower concentration of silane will be inclined to the crystalline of film.