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中文摘要：
通过纳米复合掺杂的方法，在BSCCO超导体中引入了均匀排布的纳米ZnO缺陷。研究并比较了不同掺杂方法对超导体性能以及ZnO在超导体中分布状态的影响。测试结果表明，不同掺杂方法所制备的样品均有明显的超导现象；经HRSEM表征，纳米复合掺杂所得样品中ZnO缺陷呈线状均匀排布，粒径约为100nm。
英文摘要：
Uniformly distributed ZnO nano-defects were introdueed into the BSCCO supereonduetors, using nano-eomposite method. The performanee of supereonduetors and distribution of ZnO in supereonduetors aeeording to different doping methods were researched. The results of standard four-probes method indicated that all those samples fabricated by different doping methods had obvious performance belonging to HTS. From the HRSEM images, we could see nano-ZnO（about 100nm） defects linearly distributed on the surface of samples fabrieated by nano-eomposite doping method.
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