中文摘要：

基于90 nm金属-氧化物半导体场效应晶体管（metal-oxide-semiconductor field-effect transistor,MOSFET）器件的S参数测试的结果,对测试结构进行去嵌,采用直接提取法提取测试结构的寄生元件参数.在去除寄生元件参数的影响后,以仿真模型的S参数和测量所得的S参数之间的差值作为优化标准,应用半分析法提取小信号模型的各个元件参数.结果表明：在1~40 GHz的频率范围内,模拟的S参数和测试的S参数在史密斯圆图中吻合良好,两者之间的误差均处于较低水平,验证了模型的准确性和参数提取方法的正确性.

英文摘要：

The characteristics of microwave network input and output is represented by S-parameter, in this paper,based on the S-parameter measurement, the de-embedding procedure is operated on the test structure, the direct extracting method is applied to extract the parasitic elements of the test structure, the semi-analytical parameter extraction method for nanometer metal-oxide-semiconductor field-effect transistor（MOSFET） to extract the intrinsic elements is presented. Based on the test structure to determine the pad capacitances and parasitic inductances, good agreement is obtained between the simulated and measured result for a 90 nm MOSFET in the frequency range of 1-40 GHz. The error between the simulated and measured result is presented in the paper. The magnitudes of errors are small, which verified the accurary of the model and the parameter extracting method.