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Resonant energy transfer from nanocrystal Si to β-FeSi2 in hybrid Si/β-FeSi2 film
  • ISSN号:1674-1056
  • 期刊名称:《中国物理B:英文版》
  • 分类:TN383.1[电子电信—物理电子学] U469.72[机械工程—车辆工程;交通运输工程—载运工具运用工程;交通运输工程—道路与铁道工程]
  • 作者机构:[1]Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics, Department of Physics, Nanjing University, Nanjing 210093, China, [2]Department of Physics, Nanjmg Normal Umverslty, Nanjing 210046, China, [3]Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China
  • 相关基金:Project supported by the National Basic Research Program of China (Grant Nos. 2011 CB922102 and 2013CB932901), the National Natural Science Foundation of China (Grant No. 60976063), and the Priority Academic Program Development (PAPD) of Higher Education Institutions of Jiangsu Province and Hong Kong Research Grants Council (RGC) General Research Funds (GRF) (Grant Nos. CityU 112510 and CityU 112212).
中文摘要:

The photoluminescence(PL) characteristics of hybrid β-FeSi2/Si and pure β-FeSi2films fabricated by pulsed laser deposition at 20 K are investigated.The intensity of the 1.54-μm PL from the former is enhanced,but the enhancement vanishes when the excitation wavelength is larger than the widened band gap of Si nanocrystal.Time-resolved PL decay measurements reveal that the lifetime of the photo-excited carriers in the hybrid β-FeSi2/Si film is longer than that in the pure β-FeSi2film,providing evidence that the PL enhancement results from the resonant charge transfer from nanocrystalline Si to β-FeSi2.

英文摘要:

The photoluminescence (PL) characteristics of hybrid β-FeSi2/Si and pure β-FeSi2 films fabricated by pulsed laser deposition at 20 K are investigated. The intensity of the 1.54-μm PL from the former is enhanced, but the enhancement vanishes when the excitation wavelength is larger than the widened band gap of Si nanocrystal. Time-resolved PL decay measurements reveal that the lifetime of the photo-excited carriers in the hybrid β-FeSi2/Si film is longer than that in the pure β-FeSi2 film, providing evidence that the PL enhancement results from the resonant charge transfer from nanocrystalline Si to β-FeSi2.

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期刊信息
  • 《中国物理B:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编:欧阳钟灿
  • 地址:北京 中关村 中国科学院物理研究所内
  • 邮编:100080
  • 邮箱:
  • 电话:010-82649026 82649519
  • 国际标准刊号:ISSN:1674-1056
  • 国内统一刊号:ISSN:11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406