中文摘要：

通过对GaN／A1xGa1-xN异质结中二维电子气磁输运结果的分析，研究了磁电阻的起因．结果表明，整个磁场范围的负磁电阻是由电子一电子相互作用引起的，而高场下的正磁电阻来源于平行电导的进一步修正．用拟合的方法得到了电子一电子相互作用项以及平行电导层的载流子浓度和迁移率，并用不同的计算方法对拟合结果进行了验证．

英文摘要：

The magnetotransport measurement is performed on a GaN/AlxGa1-xN heterostructure sample in a low temperature range of 1.4-25 K and at magnetic fields ranging from 0 T up to 13 T. Magnetoresistance of a two-dimensional electron gas confined in the heterostructure is investigated. The negative magnetoresistivity in the whole magnetic field range originates from the electron-electron interactions （EEIs）, while the positive magnetoresistivity in the high field range results from the parallel conductance. The EEI correc- tion terms, as well as the concentration and mobility of the parallel channel are obtained by fitting the experimental data. Furthermore, another method of calculation is used to check their accuracy.