中文摘要：

采用电子束蒸发Pt和后快速热退火的方法,研究了退火条件对Pt纳米晶的生长特性的影响,结果显示Pt纳米晶的密度随退火温度的升高和退火时间的延长均表现出先增大后减小的趋势.在800℃下退火20s能得到分布均匀的、密度为3·0×1011cm-2的Pt纳米晶.进一步研究了基于Al2O3/Pt纳米晶/HfO2叠层的MOS电容结构的存储效应,表明其在-3—＋8V扫描电压范围下C-V滞回窗口达到2·01V.在编程时间相同的情况下,当编程电压增大到9V时其平带电压偏移显著增大,这与电子穿过隧穿层的势垒减小有关,即电子由直接隧穿变为Fowler-Nordheim隧穿.此外,Pt纳米晶存储电容也表现出了随编程时间持续的电子俘获能力.

英文摘要：

Growth of Pt nanocrystals has been investigated by means of electron beam evaporation of Pt layer and post rapid thermal annealing. The results indicate that the density of nanocrystals increases first with the annealing temperature and the annealing time ,followed by a slight decrease. Uniformly distributed nanocystals with a density of 3.0×10~11 cm~-2 can be obtained in the case of the annealing at 800℃ for 20 s. Further,memory effect of Al_2O_3/Pt nanocrystals/HfO_2-based MOS capacitors has been characterized,indicating a capacitance-voltage （C -V） hysteresis window as large as 2.01 V in the sweep voltage range of -3—＋8 V. In terms of the same programming time,the flat band voltage shift of them emory capacitor starts to increase remarkably when the programming voltage is in creased to 9 V. This is related to a decrease in the energy barrier across the tunneling layer for electrons,i.e.,the tunnel mechanism of electrons is changed from direct tunneling to Fowler-Nordheim tunneling. Moreover,the memory capacitor also exhibits a capability of continuous electron trapping with prolonging of the programming duration.