中文摘要：

利用射频麟控溅射法在石英玻璃衬底上制备ZnO：Ga透明导电氧化物薄膜，主要研究了一种类调制掺杂工艺对GZO薄膜的薄膜形貌结构和光电性能的影响。通过X射线衍射仪（XBD）、扫描电子显微镜（SEM）、紫外-可见-近红外分光光度计（UV-VIS-NIR）和四探针测试仪对GZO薄膜进行表征。结果表明：不同的衬底温度调制下生长的GZ0薄膜都具有明显的C轴择优取向，对于衬底温度调制条件下，在150℃／RT条件下的薄膜结晶最好，且在可见近红外波段（480～1600nm）平均透过率达到85．4％左右，薄膜最低方阻达到60Ω／□。

英文摘要：

Transparent conductive GZO oxide films were prepared on quartz glass substrate using radio-frequency （RF） magnetron sputtering. The effect of a kind of new doping process on morphology structure and photoelectric properties of GZO films were investigated. The GZO thin films were characterized by X-ray diffraction （XRD）, scanning electron microscope （SEM）, ultraviolet-visible-near infrared spectrophotometer （UV-VIS-NIR） and four point probe resistance tester. The r~ults shows that all the GZO films prepared with different substrate temperatures have obvious C axis preferred grain orientation. Among the different substrate temperatures, the film crystallization is the best under the condition of 150℃ / RT, and the average transmittance of the film in visible and near infrared region（480 nm to 1600 nm） is about 85.4%, minimum sheet resistance reached 60Ω/□.