位置：成果数据库 > 期刊 > 期刊详情页
Phase diagram on phase purity of InN grown pressurized-reactor MOVPE
  • ISSN号：1610-1642
  • 期刊名称：phys. stat. sol. (c)
  • 时间：2012.2.8
  • 页码：654-657
  • 相关项目：高InN组分InGaN材料生长机理的研究
作者： Yuhuai Liu|Takashi Hanada|Ryuji Katayama|Takashi Matsuoka|
同期刊论文项目
高InN组分InGaN材料生长机理的研究
期刊论文 8 会议论文 2
同项目期刊论文
Raman-scattering characterization of InN films grown by pressurized metal organic vapor phase epitax
Key factors for metal organic chemical vapor deposition of InGaN films with high InN molar fraction
A novel material for laser diodes of optical fiber communication
ffect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy
Tilted Domain and Indium Content of InGaN Layer on m-Plane GaN Substrate Grown by Metalorganic Vapor