中文摘要：

采用有机金属化合物化学气相沉积法（MOCVD）在浮法玻璃上沉积了F掺杂的氧化锡薄膜,制备低辐射镀膜玻璃,并在高温电阻炉和钢化炉内分别进行热处理和钢化实验,对不同条件下的电学性能进行了研究。采用XPS和AES对薄膜中[O]/[Sn]平均含量的变化进行了分析。结果表明,在650℃之内,表面电阻没有发生明显改变,但此后快速上升至86.68Ω/□;薄膜O和Sn的含量不符合化学计量比,[O]/[Sn]比均小于1.20;随着热处理温度的提高和时间的延长,薄膜中O含量有所提高,与表面电阻的变化趋势接近。

英文摘要：

F-doped tin oxide films were deposited on a glass plate via the chemical vapor deposition to prepare the low emittance coated glass, and then heat treatment and tempered experiment were carried out in a resistance furnace and a toughening furnace, respectively. The electrical properties of the tin oxide films prepared by various treatments were investigated, the [O]/[Sn] ratio in the films were determined with XPS and AES. The results show that the sheet resistance has no obvious change if the treatment temperature is below 650 ~C. As the temperature is further increased, the sheet resistance rises quickly to 86.68 D/D, and the ratio of[O]/[Sn] is lower than 1.20, suggestinganon-stoichiometriccharacter. The relative oxygen content increases with treatment tem- perature and time, consistent with the variation tendency of the sheet resistance.