中文摘要：

接触暴露被期望发生在常规平版印刷术，并且能是进程偏差的来源(例如缩小和模板的失真) 在反应离子蚀刻并且诱导地联合的血浆蚀刻，，期间，这些偏差被离子轰炸导致。这典型地导致不希望得到的 sidewall 效果，例如更低的 sidewall 角度。这里，我们报导能有效地在平版印刷术应用最小化 sidewall 效果的一个新奇的挂 bowlshaped 平版印刷术面具。作为一个测试用例，有垂直 sidewalls 的标准硅碳化物支柱用这个面具被制作。面具能与紫外线平版印刷术被用于 high-aspect-ratio 结构的制造。

英文摘要：

Contact exposure is expected to occur in conventional lithography, and can be a source of process deviations （such as shrinking and distortion of templates） during reactive ion etching and inductively coupled plasma etching, as these deviations are induced by ion bombardment. This typically results in undesired sidewall effects, such as lower sidewall angles. Here we report a novel hanging bowlshaped lithography mask that can effectively minimize sidewall effects in lithography applications. As a test case, standard silicon carbide pillars with vertical sidewalls are fabricated using this mask. The mask could be used for fabrication of high-aspect-ratio structures with ultra-violet lithography.