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Investigation of Te inclusions in CdZnTe crystalline material using Raman spectroscopy and IR techni
  • ISSN号：0042-207X
  • 期刊名称：Vacuum
  • 时间：0
  • 页码：1003-1006
  • 相关项目：新型核辐射探测器材料CdMnTe的晶体生长、结构缺陷及性能研究
作者： Min, Jiahua|Liang, Xiaoyan|Chen, Jun|Wang, Dong|Li, Hui|Zhang, Jijun|
同期刊论文项目
新型核辐射探测器材料CdMnTe的晶体生长、结构缺陷及性能研究
期刊论文 23 会议论文 1 专利 2
同项目期刊论文
A two-step deposition process for electrode fabrication of CdZnTe detectors
碲锌镉晶片机械研磨和机械抛光工艺研究
Effects of gradient heat treatment on Te-rich CdZnTe crystal
Growth and characterization of indium-doped Cd1-xZnxTe crystal by traveling heater method
Photoluminescence analysis of Cd0.8Mn0.2Te single crystal grown by the vertical Bridgman method
Cd_(0.8)Mn_(0.2)Te晶体的磁化强度和法拉第效应研究
Twins in CdMnTe single crystals grown by Bridgman method
用于CdZnTe晶体生长的石英坩埚真空镀碳工艺研究
Parallel readout of two-element CdZnTe detectors with real-time digital signal processing
四元并行电容性Frisch栅肖特基CdZnTe探测器
垂直Bridgman法生长Cd_(1-x)Mn_xTe晶体的缺陷研究
Study on the spectrum improvement of a capacitive Frisch grid structure for CdZnTe Detector
Cd_(1-x)Mn_xTe晶体衬底的红外透过性能
Effects of contact interface degradation on the performance of CdZnTe detectors
Annealing of indium-doped CdMnTe single crystals under Cd vapors
温度梯度溶液生长法制备x=0.2的Cd_(1-x)Zn_xTe晶体及性能研究
The spectra characteristic of capacitive virtual Frisch grid detectors with different directions
Te vapor annealing of indium-doped CdMnTe crystals